Working of the diode can be explained with the help of following diagram. It is a p n junction diode characterized by the formation of a trapped space charge plasma within the junction region.
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Trapatt diode basics 2.
Trapatt diode diagram. Trapatt diode derived from the trapped plasma avalanche triggered transit mode device. In this video i have explained following topics regarding trapatt diode. Baritt diode i v curve or characteristic.
The schematic of the mitatt diode consid schematic diagram of mitatt diode. So that is the microwave source impatt diode is the source for microwave this is the schematic diagram of a typical open tube diffusion system open tube. Impatt diode schematic diagram as expected compared to si and gaas impatt diodes.
Indeed as pointed out near the beginning of this section at first it was merely a different anomalous method of operating the impatt diode. Trapatt diode internal structure 3. Ever since the expansion of current semiconductor device theory scientists have wondered about whether it is achievable to make a two terminal negative resistance device.
This reverse bias causes increase in the electric field between p and n region and the minority carriers generated attains a very large velocity. A microwave oscillator device with a similar structure to the impatt diode is the trapatt diode which stands for trapped plasma avalanche triggered transit. Trapatt diode construction and working.
It can be seen within the diagram that the punch through voltages vpt are different for the two directions. It was first reported by prager in 1967. Trapatt diode working 5.
They can be made to be different or almost the same. The trapatt diodes diameter ranges from as small as 50 um for uw operation to 750 um at lower frequency for high peak power device. Diode is operated in reverse biased.
Difference between impatt diode and trapatt diode and baritt diode. The trapatt diode construction and working is derived from and closely related to the impatt diode. This difference results from asymmetry in the two junctions and can be controlled during the manufacture stages of the diode.
Trapatt diode characteristics 4. It is a high efficiency microwave generator. The trapatt diode is typically represented by a.
Silicon impatt diodes can produce up to 3 kilowatts of power continuously with higher power available in pulses. A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electron holes that become trapped in low field region behind the zone. In 1958 wt read revealed the concept of avalanche diode.
Typically the construction of the device consists of a p n n although where for higher power levels an n p p structure is better. The trapatt diode is based around the initial concept of the impatt but it has been enhanced by increasing the doping level between the junction and the anode. At the instant a the diode current is on.
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